PRELIMINARY
P
K6R1008V1C-C/C-L, K6R1008V1C-I/C-P
CMOS SRAM
Document Title
128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No.
History
Rev. 0.0
Initial release with Preliminary.
Rev. 1.0
Relax DC characteristics.
Item
ICC
12ns
15ns
20ns
Rev. 2.0
Draft Data
Aug. 5. 1998
Mar. 3. 1999
VIH
VIL
Apr. 24. 2000
Rev. 4.0
Max
VCC+0.5
0.8
Final
Oct. 2. 2000
Final
Sep. 24. 2001
Previous
Min
2.0
-0.5
Final
Final
Changed
0.5mA
VIH/VIL Change
Item
Preliminary
Changed
75mA
73mA
70mA
Add 10ns part.
Rev. 3.1
Preliminary
Sep. 7. 1998
Previous
70mA
68mA
65mA
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Changed Standby Current.
Item
Previous
Standby Current(Isb1)
0.3mA
2.3. Added Data Retention Characteristics.
Rev. 3.0
Remark
Changed
Min
2.0
-0.3
Delete 20ns speed bin
Max
VCC+0.3
0.8
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 4.0
September 2001
