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K6R1016C1C-TC12
K6R1016C1C-C/C-L, K6R1016C1C-I/C-P CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with preliminary. Aug. 5. 1998 Preliminary Rev. 1.0 Relax DC characteristics. Item ICC 12ns 15ns 20ns Sep. 7. 1998 Preliminary Sep. 17. 1998 Preliminary Nov. 5. 1998 Final Dec. 10. 1998 Final Previous 90mA 88mA 85mA Rev. 2.0 Add 48-fine pitch BGA. Rev. 2.1 Changed 95mA 93mA 90mA Changed device part name for FP-BGA. Item Previous Symbol Z ex) K6R1016C1C-Z -> K6R1016C1C-F Rev. 2.2 Changed device ball name for FP-BGA. Previous I/O1 ~ I/O8 I/O9 ~ I/O16 Changed F Changed I/O9 ~ I/O16 I/O1 ~ I/O8 Rev. 3.0 Added Data Retention Characteristics. Mar. 3. 1999 Final Rev. 3.1 Add 10ns part. Mar. 3. 2000 Final Rev. 4.0 Delete 20ns speed bin Sep.24. 2001 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Revision 4.0 September 2001
SAMSUNG
Samsung Electronics Co., Ltd
韓国
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