PRELIMINARY
CMOS SRAM
K6R1016C1D
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No.
History
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 0.3
Initial release with Preliminary.
Page 4, DC operation condition modify
Current modify
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
Previous
10ns
85mA
ICC(Industrial)
12ns
75mA
Draft Data
Remark
June. 8. 2001
June. 16. 2001
September. 9. 2001
December. 18.2001
Preliminary
Preliminary
Preliminary
Preliminary
1. Final datasheet release.
2. Correct read cycle timing diagram(2).
June. 19. 2002
Final
Rev. 2.0
1. Delete 12ns speed bin.
July. 8. 2002
Final
Rev. 3.0
1. Add the Lead Free Package type.
July. 26, 2004
Final
Rev. 1.0
Current
75mA
65mA
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev. 3.0
July 2004
