CMOS SRAM
K6T4016C3B Family
Document Title
256Kx16 bit Low Power CMOS Static RAM
Revision History
History
Draft Data
Remark
0.0
Initial draft
June 28, 1996
Advance
0.1
Revise
- Die name change ; A to B
September 19, 1996
Preliminary
1.0
Finalize
December 17, 1996
Final
2.0
Revise
- Operating current update and release.
ICC(Read/Write) = 30/60 → 15/75mA
ICC1(Read/Write) = 30/60 → 15/75mA
ICC2 = 160 → 130mA
February 17, 1997
Final
3.0
Revise
- Change datasheet format
- Remove I CC write value from table.
February 17, 1998
Final
4.0
Revise
- Change test load at 55ns: 100pF → 50pF
June 22, 1998
Final
Errarta correction
August 8, 1998
Revise
- Add 55ns product for industrial temperature
May 22, 2001
Revision No.
4.01
5.0
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 5.0
May 2001
