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KM736V987T-10
KM736V987 KM718V087 512Kx36 & 1Mx18 Synchronous SRAM Document Title 512Kx36 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 History Initial draft Draft Date March. 17 . 1999 Remark Preliminary 0.1 1. Update ICC & ISB values. May. 27. 1999 Preliminary 0.2 1. Change tOE from 3.5ns to 4.0ns at -8 . 2. Change tOE from 3.5ns to 4.0ns at -9 . 3. Change tOE from 3.5ns to 4.0ns at -10 . June. 22. 1999 Preliminary 0.3 1. Change ISB value from 130mA to 80mA at -8 . 2. Change ISB value from 120mA to 70mA at -9 . 3. Change ISB value from 120mA to 60mA at -10 . Sep. 04. 1999 Preliminary 0.4 1. Change tCYC value from 12ns to 10ns at -9 . Oct. 28. 1999 Preliminary 1.0 1. Final Spec Release. Dec. 08. 1999 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- December 1999 Rev 1.0
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