SSM3K16FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FU
High Speed Switching Applications
Analog Switching Applications
•
•
Unit: mm
Suitable for high-density mounting due to compact package
Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V)
: Ron = 15 Ω (max) (@VGS = 1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Drain-Source voltage
Gate-Source voltage
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Drain current
VDS
VGSS
ID
IDP
PD(Note 1)
Tch
Tstg
Rating
Unit
20
±10
100
200
150
150
−55~150
V
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × 3)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1E
0.6 mm
1.0 mm
Marking
Equivalent Circuit
3
3
DS
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01
