M29W008AT
M29W008AB
8 Mbit (1Mb x8, Boot Block)
Low Voltage Single Supply Flash Memory
FEATURES SUMMARY
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2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ
OPERATIONS
ACCESS TIME: 80ns
PROGRAMMING TIME: 10µs typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Status Register bits and Ready/Busy
Output
SECURITY PROTECTION MEMORY AREA
INSTRUCTIONS ADDRESS CODING: 3
digits
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M29W008AT: D2h
– Bottom Device Code, M29W008AB: DCh
Figure 1. Packages
TSOP40 (N)
10 x 20mm
Figure 2. Logic Diagram
VCC
20
8
A0-A19
DQ0-DQ7
W
E
M29W008AT
M29W008AB
RB
G
RP
VSS
AI02716
March 2004
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