MITSUBISHI SEMICONDUCTOR
M54517P
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54517P is seven-circuit Darlington transistor arrays. The
circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
PIN CONFIGURATION
INPUT
FEATURES
Medium breakdown voltage (BVCEO ≥ 25V)
q High-current driving (Ic(max) = 400mA)
q Driving available with PMOS IC output
q Wide operating temperature range (Ta = –20 to +75°C)
q
IN1→ 1
16 →O1
IN2→ 2
15 →O2
IN3→ 3
14 →O3
IN4→ 4
13 →O4 OUTPUT
IN5→ 5
12 →O5
IN6→ 6
11 →O6
IN7→ 7
10 →O7
GND
8
9
Package type 16P4
NC
NC : No connection
CIRCUIT DIAGRAM
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
OUTPUT
INPUT
20K
20K
2K
GND
FUNCTION
The M54517P has seven circuits consisting of NPN
Darlington transistors. These ICs have resistance of 20kΩ
between input transistor bases and input pins. The output
transistor emitters are all connected to the GND pin (pin 8).
Collector current is 400mA maximum. Collector-emitter supply voltage is 25V maximum.
ABSOLUTE MAXIMUM RATINGS
Symbol
The seven circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Parameter
Conditions
Ratings
Unit
Current per circuit output, L
–0.5 ~ +25
400
V
mA
Ta = 25°C, when mounted on board
–0.5 ~ +25
1.47
V
W
–20 ~ +75
–55 ~ +125
°C
VCEO
Collector-emitter voltage
Output, H
IC
VI
Collector current
Input voltage
Pd
Topr
Power dissipation
Tstg
Operating temperature
Storage temperature
°C
Jan. 2000
