HOME＞在庫検索＞在庫情報
M54583P
MITSUBISHI SEMICONDUCTOR M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION (TOP VIEW) M54583P IN1→ 1 18 →O1 IN2→ 2 17 →O2 IN3→ 3 16 →O3 IN4→ 4 15 →O4 IN5→ 5 14 →O5 IN6→ 6 13 →O6 IN7→ 7 12 →O7 IN8→ 8 11 →O8 GND 10 INPUT FEATURES ● High breakdown voltage (BVCEO ≥ 50V) ● High-current driving (Ic(max) = 400mA) ● Active L-level input ● With input clamping diodes 9 VCC Outline 18P4G M54583FP APPLICATION Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces NC 1 20 NC IN1→ 2 IN2→ 3 18 →O2 17 →O3 IN4→ 5 INPUT 19 →O1 IN3→ 4 FUNCTION The M54583 is produced by adding PNP transistors to M54523 inputs. Eight circuits having active L-level inputs are provided. Resistance of 7kΩ and diode are provided in series between each input and PNP transistor base. The input diode is intended to prevent the flow of current from the input to the VCC. Without this diode, the current flow from “H” input to the VCC and the “L” input circuits is activated, in such case where one of the inputs of the 8 circuits is “H” and the others are “L” to save power consumption. The diode is inserted to prevent such misoperation. This device is most suitable for a driver using NMOS IC output especially for the driver of current sink. Collector current is 400mA maximum. Collector-emitter supply voltage is 50V. The 54583FP is enclosed in a molded small flat package, enabling space saving design. OUTPUT 16 →O4 IN5→ 6 15 →O5 IN6→ 7 14 →O6 IN7→ 8 13 →O7 IN8→ 9 OUTPUT 12 →O8 GND 10 11 VCC Outline 20P2N-A NC : No connection CIRCUIT DIAGRAM (EACH CIRCUIT) VCC 7k INPUT 7k OUTPUT 2.7k 7.2k GND 3k The eight circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω May 2007
MITSUBISHI
NECエレクトロニクスは平成14年にNECから、ルネサスは平成15年に日立製作所及び三菱電機からそれぞれ分離独立する形で設立された半導体専業企業であり両者は合併した。
RENESAS
ルネサス エレクトロニクス株式会社
日本
2010年（平成22年）4月に設立された大手半導体メーカー。半導体製品の研究開発・製造・販売・サービス。主力製品は、マイコン(CISC、RISC)、パワーデバイス、アナログ＆ミックスドシグナルIC、汎用IC、高周波デバイス、光半導体、車載用LSI、産業用LSI、メモリ、ASIC、USB ASSP、システムLSI
弊社からの見積回答メールの返信又はFAXにてお願いします。
