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部品型式

MC14071BBCBS

製品説明
仕様・特性

MC14001B Series B-Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. http://onsemi.com MARKING DIAGRAMS Features 14 • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All Outputs Buffered • Capable of Driving Two Low−power TTL Loads or One Low−power • • • PDIP−14 P SUFFIX CASE 646 1 Schottky TTL Load Over the Rated Temperature Range. Double Diode Protection on All Inputs Except: Triple Diode Protection on MC14011B and MC14081B Pin−for−Pin Replacements for Corresponding CD4000 Series B Suffix Devices These Devices are Pb−Free and are RoHS Compliant 14 SOIC−14 D SUFFIX CASE 751A Parameter VDD Vin, Vout Iin, Iout DC Supply Voltage Range Input or Output Voltage Range (DC or Transient) Input or Output Current (DC or Transient) per Pin 140xxBG AWLYWW 1 14 14 0xxB ALYWG G TSSOP−14 DT SUFFIX CASE 948G MAXIMUM RATINGS (Voltages Referenced to VSS) Symbol MC140xxBCP AWLYYWWG Value Unit −0.5 to +18.0 V −0.5 to VDD + 0.5 V ± 10 mA 1 14 SOEIAJ−14 F SUFFIX CASE 965 MC140xxB ALYWG 1 TA Ambient Temperature Range −55 to +125 °C Tstg Storage Temperature Range −65 to +150 °C TL Lead Temperature (8−Second Soldering) 260 °C xx = Specific Device Code A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) V DEVICE INFORMATION PD Power Dissipation, per Package (Note 1) VESD ESD Withstand Voltage Human Body Model Machine Model Charged Device Model 500 mW > 3000 > 300 N/A Device Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Temperature Derating: Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS v (Vin or Vout) v VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2011 June, 2011 − Rev. 8 Description MC14001B 1 Quad 2−Input NOR Gate MC14011B Quad 2−Input NAND Gate MC14023B Triple 3−Input NAND Gate MC14025B Triple 3−Input NOR Gate MC14071B Quad 2−Input OR Gate MC14073B Triple 3−Input AND Gate MC14081B Quad 2−Input AND Gate MC14082B Dual 4−Input AND Gate ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Publication Order Number: MC14001B/D

ブランド

MOT

現況

1999年8月4日、ディスクリート・標準アナログ・標準ロジックなどの半導体部門をオン・セミコンダクターとして分社化した。これは、イリジウムコミュニケーションズ倒産の損失をカバーするために分社化された。

会社名

ON Semiconductor

本社国名

U.S.A

事業概要

オン・セミコンダクターの前身は、モトローラ社の半導体コンポーネント・グループであり、モトローラ社のディスクリート、標準アナログ、標準ロジック・デバイスを継続して製造。

供給状況

 
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