RN2101F∼RN2106F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2101F,RN2102F,RN2103F
RN2104F,RN2105F,RN2106F
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1101F~RN1106F
Equivalent Circuit and Bias Resister Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN2101F
4.7
4.7
RN2102F
10
10
RN2103F
22
22
RN2104F
47
47
RN2105F
2.2
47
JEDEC
⎯
RN2106F
4.7
47
JEITA
⎯
TOSHIBA
Weight: 2.3 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
RN2101F~2106F
RN2101F~2104F
RN2105F, 2106F
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Rating
Unit
VCBO
−50
V
VCEO
−50
V
−10
VEBO
−5
V
IC
RN2101F~2106F
2-2HA1A
−100
mA
PC
100
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
