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MC67B618AFN9

製品説明
仕様・特性

MOTOROLA Freescale Semiconductor, Inc. Order this document by MCM67B618A/D SEMICONDUCTOR TECHNICAL DATA 64K x 18 Bit BurstRAM Synchronous Fast Static RAM MCM67B618A • • • • • • • • • • Single 5 V ± 5% Power Supply Fast Access Times: 9/10/12 ns Max Byte Writeable via Dual Write Enables Internal Input Registers (Address, Data, Control) Internally Self–Timed Write Cycle ADSP, ADSC, and ADV Burst Control Pins Asynchronous Output Enable Controlled Three–State Outputs Common Data Inputs and Data Outputs 3.3 V I/O Compatible High Board Density 52–Lead PLCC Package FN PACKAGE PLASTIC CASE 778–02 PIN ASSIGNMENTS A6 A7 E UW LW ADSC ADSP ADV K G A8 A9 A10 The MCM67B618A is a 1,179,648 bit synchronous fast static random access memory designed to provide a burstable, high–performance, secondary cache for the i486™ and Pentium™ microprocessors. It is organized as 65,536 words of 18 bits. The device integrates input registers, a 2–bit counter, high speed SRAM, and high drive capability outputs onto a single monolithic circuit for reduced parts count implementation of cache data RAM applications. Synchronous design allows precise cycle control with the use of an external clock (K). BiCMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability. Addresses (A0 – A15), data inputs (D0 – D17), and all control signals except output enable (G) are clock (K) controlled through positive–edge– triggered noninverting registers. Bursts can be initiated with either address status processor (ADSP) or DQ9 address status cache controller (ADSC) input pins. Subsequent burst DQ10 addresses can be generated internally by the MCM67B618A (burst VCC sequence imitates that of the i486 and Pentium) and controlled by the burst VSS address advance (ADV) input pin. The following pages provide more deDQ11 tailed information on burst controls. DQ12 Write cycles are internally self–timed and are initiated by the rising edge DQ13 of the clock (K) input. This feature eliminates complex off–chip write pulse DQ14 generation and provides increased flexibility for incoming signals. VSS Dual write enables (LW and UW) are provided to allow individually writeVCC able bytes. LW controls DQ0 – DQ8 (the lower bits), while UW controls DQ15 DQ9 – DQ17 (the upper bits). DQ16 DQ17 This device is ideally suited for systems that require wide data bus widths and cache memory. See Figure 2 for applications information. 7 6 5 4 3 2 1 52 51 50 49 48 47 8 46 9 45 10 44 11 43 12 42 13 41 14 40 15 39 16 38 17 37 18 36 19 35 20 34 21 22 23 24 25 26 27 28 29 30 31 32 33 DQ8 DQ7 DQ6 VCC VSS DQ5 DQ4 DQ3 DQ2 VSS VCC DQ1 DQ0 A5 A4 A3 A2 A1 A0 VSS VCC A15 A14 A13 A12 A11 Freescale Semiconductor, Inc... With Burst Counter and Self–Timed Write PIN NAMES A0 – A15 . . . . . . . . . . . . . . . . Address Inputs K . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Clock ADV . . . . . . . . . . . . Burst Address Advance LW . . . . . . . . . . . . Lower Byte Write Enable UW . . . . . . . . . . . . Upper Byte Write Enable ADSC . . . . . . . . . Controller Address Status ADSP . . . . . . . . . Processor Address Status E . . . . . . . . . . . . . . . . . . . . . . . . . Chip Enable G . . . . . . . . . . . . . . . . . . . . . . Output Enable DQ0 – DQ17 . . . . . . . . . . Data Input/Output VCC . . . . . . . . . . . . . . . . + 5 V Power Supply VSS . . . . . . . . . . . . . . . . . . . . . . . . . . Ground NC . . . . . . . . . . . . . . . . . . . . . No Connection All power supply and ground pins must be connected for proper operation of the device. i486 and Pentium are trademarks of Intel Corp. REV 2 11/5/96 © Motorola, Inc. 1996 MOTOROLA FAST SRAM For More Information On This Product, Go to: www.freescale.com MCM67B618A 1

ブランド

MOT

現況

1999年8月4日、ディスクリート・標準アナログ・標準ロジックなどの半導体部門をオン・セミコンダクターとして分社化した。これは、イリジウムコミュニケーションズ倒産の損失をカバーするために分社化された。

会社名

ON Semiconductor

本社国名

U.S.A

事業概要

オン・セミコンダクターの前身は、モトローラ社の半導体コンポーネント・グループであり、モトローラ社のディスクリート、標準アナログ、標準ロジック・デバイスを継続して製造。

供給状況

 
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