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MJD32BT4
MJD31B/31C MJD32B/32C ® COMPLEMENTARY SILICON POWER TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP31B/C AND TIP32B/C 3 APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS 1 DPAK TO-252 (Suffix "T4") DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJD31B MJD31C PNP MJD32B MJD32C V CBO Collector-Base Voltage (I E = 0) 80 100 V V CEO Collector-Emitter Voltage (I B = 0) 80 100 V V EBO Emitter-Base Voltage (I C = 0) IC I CM IB V Collector Current 3 A Collector Peak Current 5 A 1 A Base Current o P tot Total Dissipation at T c = 25 C T stg Storage Temperature Tj 5 Max. Operating Junction Temperature 15 W -65 to 150 o C 150 o C For PNP types the values are intented negative. May 1999 1/5
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