MOTOROLA
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by MJE9780/D
SEMICONDUCTOR TECHNICAL DATA
MJE9780 *
Advance Information
PNP Silicon Power Transistor
*Motorola Preferred Device
The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and
CRT monitors, as well as other applications requiring a 150 volt PNP transistor.
Features:
PNP SILICON POWER
TRANSISTOR
3.0 AMPERES
150 VOLTS
• Standard TO–220AB Package
• Gain Range of 50 – 200 at 500 mAdc/10 volts
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
MJE9780
Unit
Collector–Emitter Sustaining Voltage
VCEO
150
Vdc
Collector–Base Voltage
VCBO
200
Vdc
Emitter–Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
Collector Current — Peak
IC
ICM
3.0
5.0
Adc
Total Power Dissipation (TA = 25°C)
Derate above 25°C
PD
2.0
0.016
Watts
W/°C
Total Power Dissipation
Derate above 25°C
PD
40
0.32
Watts
W/°C
TJ, Tstg
– 55 to 150
°C
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
RθJC
RθJA
3.12
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
TL
260
°C
Rating
Operating and Storage Temperature
THERMAL CHARACTERISTICS
CASE 221A–06
TO–220AB
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
VCEO(sus)
°
150
°
—
—
200
—
—
6.0
—
—
—
—
10
—
—
Unit
10
OFF CHARACTERISTICS*
Collector–Emitter Sustaining Voltage
(IC = 50 mA, IB = 0)
Collector–Base Voltage
(IC = 5.0 mAdc)
VCBO
Emitter–Base Voltage
(IB = 5.0 mAdc)
VEBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
Vdc
Vdc
ICBO
Vdc
µAdc
µAdc
* Indicates Pulse Test: P.W. = 300 µsec max, Duty Cycle = 2%.
(continued)
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
© Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1