LESHAN RADIO COMPANY, LTD.
Silicon Hot –Carrier Diodes
MBD701
MMBD701LT1
These devices are designed primarily for high–efficiency UHF
and VHF detector applications. They are readily adaptable to many
other fast switching RF and digital applications. They are supplied
in an inexpensive plastic package for low–cost,high–volume
consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.0 pF @ V R = 20 V
• High Reverse Voltage – to 70 Volts
• Low Reverse Leakage – 200 nA (Max)
70 VOLTS
HIGH-VOLTAGE
SILICON HOT-CARRIER
DETECTOR AND SWITCHING
DIODES
3
3
CATHODE
1
ANODE
1
2
CASE
318–08, STYLE8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)
MBD701
Rating
Reverse Voltage
Forward Power Dissipation
@ T A = 25°C
Derate above 25°C
Operating Junction
Temperature Range
Storage Temperature Range
Symbol
VR
PF
MMBD701LT1
Value
70
280
2.8
T
200
2.0
mW
mW/°C
°C
J
T stg
Unit
Volts
–55 to +125
–55 to +150
°C
DEVICE MARKING
MMBD701LT1 = 5H
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I
Min
typ
Max
Unit
Volts
V (BR)R
70
—
—
Total Capacitance (V R = 20 V, f = 1.0 MHz) Figure 1
CT
—
0.5
1.0
pF
Reverse Leakage (V R = 35 V) Figure 3
I
—
9.0
200
nAdc
Forward Voltage (I F = 1.0 mAdc) Figure 4
V
F
—
0.42
0.5
Vdc
Forward Voltage (I F = 10 mAdc) Figure 4
V
F
—
0.7
1.0
Vdc
R
= 10µAdc)
Symbol
R
NOTE: MMBD701LT1 is also available in bulk packaging. Use MMBD701L as the device title to order this device in bulk.
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