MMBD330T1, MMBD770T1
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high−efficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications. They are housed in the
SOT−323/SC−70 package which is designed for low−power surface
mount applications.
http://onsemi.com
Features
•
•
•
•
•
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
Available in 8 mm Tape and Reel
Pb−Free Packages are Available
1
MARKING
DIAGRAMS
MAXIMUM RATINGS
Rating
Reverse Voltage
MMBD330T1
MMBD770T1
Forward Continuous Current (DC)
Nonrepetitive Peak Forward Current
(Note 1)
Forward Power Dissipation
TA = 25°C
Junction Temperature
Storage Temperature Range
3
3
Symbol
Value
Unit
VR
30
70
Vdc
IF
200
mA
IFSM
1.0
A
PF
120
mW
TJ
−55 to +125
°C
Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
1. 60 Hz Halfsine.
1
XX M G
G
2
SC−70/SOT−323
CASE 419
1
XX
= Specific Device Code
4T
= MMBD330T1
5H
= MMBD770T1
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon the manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBD330T1
SC−70
3000/T
ape & Reel
SC−70
(Pb−Free)
3000/T
ape & Reel
SC−70
3000/T
ape & Reel
SC−70
(Pb−Free)
3000/T
ape & Reel
MMBD330T1G
MMBD770T1
MMBD770T1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 4
1
Publication Order Number:
MMBD330T1/D
