MMBFJ309LT1,
MMBFJ310LT1
JFET − VHF/UHF Amplifier
Transistor
N−Channel
http://onsemi.com
Features
2 SOURCE
• Pb−Free Packages are Available
3
GATE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDS
25
Vdc
Gate−Source Voltage
VGS
25
Vdc
IG
10
mAdc
Gate Current
1 DRAIN
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
225
1.8
556
°C/W
TJ, Tstg
−55 to +150
SOT−23 (TO−236)
CASE 318
STYLE 10
mW
mW/°C
RqJA
1
°C
2
PD
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
6x M G
G
1
6x
= Device Code
x = U for MMBFJ309LT1
x = T for MMBFJ310LT1
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMBFJ309LT1
SOT−23
3,000 / Tape & Reel
MMBFJ309LT1G
MMBFJ310LT1
MMBFJ310LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
SOT−23
3,000 / Tape & Reel
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1
Publication Order Number:
MMBFJ309LT1/D