LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
MMBV432LT1
This device is designed for FM tuning, general frequency control and
tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum signal distortion and detuning. This device is supplied
in the SOT–23 plastic package for high volume, pick and place assembly
requirements.
• High Figure of Merit— Q = 150 (Typ) @ V R = 2.0 Vdc, f = 100 MHz
• Guaranteed Capacitance Range
• Dual Diodes – Save Space and Reduce Cost
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Monolithic Chip Provides Improved Matching – Guaranteed ± 1.0% (Max)
Over Specified Tuning Range
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
1
2
2
1
CASE 318–08, STYLE 9
SOT– 23 (TO–236AB)
3
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Device Dissipation @T A = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
VR
IF
PD
Value
14
200
225
1.8
+125
–55 to +125
TJ
T stg
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
DEVICE MARKING
MMBV432LT1=M4B
ELECTRICAL CHARACTERISTICS(T A=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR=10µAdc)
Reverse Voltage Leakage Current
(V R=9.0Vdc)
Diode Capacitance
(VR=2.0 Vdc,f=1.0MHz)
Capacitance Ratio C2/C8
(f=1.0MHz)
Figure of Merit
(VR=2.0 Vdc, f=100MHz)
Symbol
Min
Typ
Max
Unit
V (BR)R
14
—
—
Vdc
IR
—
—
100
nAdc
CT
43
—
48.1
pF
CR
1.5
—
2.0
—
Q
100
150
—
—
MMBV432–1/2
