MOTOROLA
Order this document
by MMDF2P01HD/D
SEMICONDUCTOR TECHNICAL DATA
Designer's
™ Data Sheet
MMDF2P01HD
Medium Power Surface Mount Products
TMOS P-Channel
Field Effect Transistors
Motorola Preferred Device
MiniMOS™ devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
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DUAL TMOS POWER FET
2.0 AMPERES
12 VOLTS
RDS(on) = 0.18 OHM
™
D
CASE 751–05, Style 11
SO–8
G
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
S
Source–1
1
8
Drain–1
Gate–1
2
7
Drain–1
Source–2
3
6
Drain–2
Gate–2
4
5
Drain–2
Top View
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
Rating
Symbol
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C (2)
Vdc
12
Vdc
± 8.0
Vdc
3.4
2.1
17
Adc
PD
Gate–to–Source Voltage — Continuous
Unit
12
VGS
ID
ID
IDM
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Value
VDSS
VDGR
Drain–to–Source Voltage
2.0
Watts
Operating and Storage Temperature Range
– 55 to 150
Apk
°C
RθJA
Thermal Resistance — Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
62.5
°C/W
TL
260
°C
DEVICE MARKING
D2P01
(1) Negative sign for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device
MMDF2P01HDR2
Reel Size
Tape Width
Quantity
13″
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
©Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
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