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MMFT2955ET

製品説明
仕様・特性

MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. http://onsemi.com 1 AMPERE, 60 VOLTS RDS(on) = 300 mW P−Channel D Features G • Silicon Gate for Fast Switching Speeds • The SOT−223 Package can be Soldered Using Wave or Reflow • The Formed Leads Absorb Thermal Stress During Soldering, • Eliminating the Possibility of Damage to the Die Pb−Free Package is Available Symbol 4 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating S Value Drain−to−Source Voltage VDS 60 Gate−to−Source Voltage − Continuous VGS ±15 Drain Current − Continuous Drain Current − Pulsed ID IDM Total Power Dissipation @ TA = 25°C Derate above 25°C Unit 2 TO−261AA CASE 318E STYLE 3 3 MARKING DIAGRAM AND PIN ASSIGNMENT Vdc 4 Drain 1.2 4.8 Adc PD (Note 1) 0.8 6.4 W mW/°C AYW 2955E G G Operating and Storage Temperature Range TJ, Tstg −65 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 V, VGS = 10 V, Peak IL= 1.2 A, L = 0.2 mH, RG = 25 W) EAS 108 mJ RqJA 156 °C/W TL 260 °C Device Package 10 S MMFT2955ET1 SOT−223 1000 Tape & Reel MMFT2955ET1G SOT−223 (Pb−Free) 1000 Tape & Reel MMFT2955ET3 SOT−223 4000 Tape & Reel THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient (surface mounted) Maximum Temperature for Soldering Purposes, Time in Solder Bath Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Power rating when mounted on FR−4 glass epoxy printed circuit board using recommended footprint. 1 Gate 2 Drain 3 Source A = Assembly Location Y = Year W = Work Week G = Pb−Free Package 2955E = Device Code (Note: Microdot may be in either location) ORDERING INFORMATION Shipping† †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 7 1 Publication Order Number: MMFT2955E/D

ブランド

MOT

現況

1999年8月4日、ディスクリート・標準アナログ・標準ロジックなどの半導体部門をオン・セミコンダクターとして分社化した。これは、イリジウムコミュニケーションズ倒産の損失をカバーするために分社化された。

会社名

ON Semiconductor

本社国名

U.S.A

事業概要

オン・セミコンダクターの前身は、モトローラ社の半導体コンポーネント・グループであり、モトローラ社のディスクリート、標準アナログ、標準ロジック・デバイスを継続して製造。

供給状況

 
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