MOTOROLA
Order this document
by MMSF2P02E/D
SEMICONDUCTOR TECHNICAL DATA
Designer's
™ Data Sheet
MMSF2P02E
Medium Power Surface Mount Products
TMOS Single P-Channel
Field Effect Transistors
Motorola Preferred Device
MiniMOS™ devices are an advanced series of power MOSFETs
which utilize Motorola’s TMOS process. These miniature surface
mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc–dc
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
•
•
•
•
•
•
•
•
SINGLE TMOS
POWER MOSFET
2.5 AMPERES
20 VOLTS
RDS(on) = 0.250 OHM
™
D
CASE 751–05, Style 13
SO–8
G
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
IDSS Specified at Elevated Temperature
S
N–C
1
8
Drain
Source
2
7
Drain
Source
3
6
Drain
Gate
4
5
Drain
Top View
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
Rating
Symbol
Value
Unit
VDSS
VGS
Drain–to–Source Voltage
20
Vdc
Drain Current — Continuous @ TA = 25°C (2)
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C(2)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 6.0 Apk, L = 12 mH, RG = 25 Ω)
Thermal Resistance — Junction to Ambient(2)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
± 20
Vdc
ID
ID
IDM
PD
Gate–to–Source Voltage — Continuous
2.5
1.7
13
Adc
2.5
Watts
TJ, Tstg
EAS
– 55 to 150
°C
216
mJ
RθJA
50
°C/W
TL
260
°C
Apk
DEVICE MARKING
S2P02
(1) Negative sign for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.
ORDERING INFORMATION
Device
MMSF2P02ER2
Reel Size
Tape Width
Quantity
13″
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
©Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1
