This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1280
Silicon NPN epitaxial planar type
For low-voltage type medium output power amplification
Unit: mm
4.5±0.1
1.6±0.2
2.5±0.1
0.4±0.04
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0.5±0.08
3˚
1
0.4±0.08
4.0+0.25
–0.20
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory operation performances at high efficiency with the lowvoltage power supply.
• Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
1.5±0.1
1.0+0.1
–0.2
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■ Features
1.5±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
20
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5
V
1
A
45˚
V
Collector-emitter voltage (Base open)
0.4 max.
2.6±0.1
3˚
Collector current
IC
Peak collector current
ICP
Collector power dissipation *
PC
Junction temperature
Tj
Storage temperature
Tstg
2
A
1
150
1 : Base
2 : Collector
3 : Emitter
MiniP3-F1 Package
Marking Symbol: R
W
°C
−55 to +150
3.0±0.15
°C
cm2
ue
or more, and the
Note) *: Printed circuit board: Copper foil area of 1
board thickness of 1.7 mm for the collector portion
Parameter
ce
/D
isc
on
tin
■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
Conditions
Min
Typ
Max
Unit
VCEO
IC = 1 mA, IB = 0
20
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
Forward current transfer ratio
hFE1 *
VCE = 2 V, IC = 0.5 A
90
50
hFE2
VCE = 2 V, IC = 1.5 A
Ma
int
en
an
Collector-emitter voltage (Base open)
Collector-emitter saturation voltage
VCE(sat)
VBE(sat)
IC = 500 mA, IB = 50 mA
Transition frequency
V
1.2
V
VCB = 6 V, IE = −50 mA, f = 200 MHz
Cob
150
MHz
VCB = 6 V, IE = 0, f = 1 MHz
fT
Collector output capacitance
(Common base, input open circuited)
µA
0.5
IC = 1 A, IB = 50 mA
Base-emitter saturation voltage
1
280
18
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
90 to 155
130 to 210
180 to 280
Publication date: December 2002
SJC00214CED
1