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MN1280-R

製品説明
仕様・特性

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 2.5±0.1 0.4±0.04 d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll htt it d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at ion / . 3 2 0.5±0.08 3˚ 1 0.4±0.08 4.0+0.25 –0.20 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply. • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.5±0.1 1.0+0.1 –0.2 M Di ain sc te on na tin nc ue e/ d ■ Features 1.5±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 20 VCEO 20 V Emitter-base voltage (Collector open) VEBO 5 V 1 A 45˚ V Collector-emitter voltage (Base open) 0.4 max. 2.6±0.1 3˚ Collector current IC Peak collector current ICP Collector power dissipation * PC Junction temperature Tj Storage temperature Tstg 2 A 1 150 1 : Base 2 : Collector 3 : Emitter MiniP3-F1 Package Marking Symbol: R W °C −55 to +150 3.0±0.15 °C cm2 ue or more, and the Note) *: Printed circuit board: Copper foil area of 1 board thickness of 1.7 mm for the collector portion Parameter ce /D isc on tin ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol Conditions Min Typ Max Unit VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 Forward current transfer ratio hFE1 * VCE = 2 V, IC = 0.5 A 90 50 hFE2 VCE = 2 V, IC = 1.5 A Ma int en an Collector-emitter voltage (Base open) Collector-emitter saturation voltage VCE(sat) VBE(sat) IC = 500 mA, IB = 50 mA Transition frequency  V 1.2 V VCB = 6 V, IE = −50 mA, f = 200 MHz Cob 150 MHz VCB = 6 V, IE = 0, f = 1 MHz fT Collector output capacitance (Common base, input open circuited) µA 0.5 IC = 1 A, IB = 50 mA Base-emitter saturation voltage 1 280 18 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 90 to 155 130 to 210 180 to 280 Publication date: December 2002 SJC00214CED 1

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