Order this document by MRF1047T1/D
NPN Silicon
Low Noise Transistor
•
•
•
•
•
RF NPN
SILICON TRANSISTOR
fτ = 12 GHz
NFmin = 1.0 dB
ICMAX = 45 mA
VCEO = 5.0 V
SEMICONDUCTOR
TECHNICAL DATA
Low Noise Figure, NFmin = 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA
High Current Gain–Bandwidth Product, fτ = 12 GHz, 3.0 V @ 15 mA
Maximum Stable Gain, 17 dB @ 1.0 GHz, 3.0 V and 10 mA
Output Third Order Intercept, OIP3 = 26 dBm @ 1.0 GHz 3.0 V
and 15 mA
Fully Ion–Implanted with Gold Metallization and Nitride Passivation
Pin 1. Base
2. Emitter
3. Collector
3
1
MAXIMUM RATINGS
Rating
2
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
5.0
Vdc
Collector–Base Voltage
VCBO
12
Vdc
Emitter–Base Voltage
VEBO
2.5
Vdc
Collector Current – Continuous [Note 3]
Power Dissipation @ TC = 75°C
Derate Linearly above TC = 75°C at
Storage Temperature Range
Maximum Junction Temperature
IC
45
mAdc
PD(max)
0.172
2.3
W
mW/°C
Tstg
–55 to 150
°C
TJ(max)
150
°C
PLASTIC PACKAGE
CASE 419
(SC–70, Tape & Reel Only)
ORDERING INFORMATION
Device
Marking
Package
MRF1047T1
WB
SC–70
Tape & Reel*
NOTES: 1. Meets Human Body Model (HBM) ≤300 V and Machine Model (MM) ≤75 V.
2. ESD data available upon request.
3. For MTBF >10 years.
*3,000 Units per 8 mm, 7 inch reel.
THERMAL CHARACTERISTIC
Characteristics
Thermal Resistance, Junction–to–Case
NOTE:
Symbol
Max
Unit
RθJC
435
°C/W
To calculate the junction temperature use TJ = (PD x RθJC) + TC. The case
temperature measured on collector lead adjacent to the package body.
© Motorola, Inc. 2001
MOTOROLA RF PRODUCTS DEVICE DATA
Rev 3
1
LAST ORDER: 03AUG01
LIFETIME BUY
The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete
bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and
IC = 3.0 mA. The noise performance of the MRF1047T1 at low bias makes
this device the ideal choice in high gain, low noise applications. This device
is well suited for low–voltage, low–current, front–end applications, for use in
pagers, cellular and cordless phones, and other portable wireless systems.
The MRF1047T1 has 16 emitter fingers, with self–aligned and enhanced
processing, resulting in a high fτ, low operating current transistor with
reduced parasitics. The MRF1047T1 is fully–ion implanted with gold
metallization and nitride passivation for maximum device r
eliability, performance and uniformity.
LAST SHIP: 26MAR02
MRF1047T1
