MOTOROLA
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by MRF6404/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
MRF6404
The MRF6404 is designed for 26 volts microwave large signal, common
emitter, class AB linear amplifier applications operating in the range 1.8 to
2.0 GHz.
• Specified 26 Volts, 1.88 GHz Characteristics
Output Power — 30 Watts
Gain — 7.5 dB Min @ 30 Watts
Efficiency — 38% Min @ 30 Watts
• Characterized with Series Equivalent Large–Signal Parameters from
1.8 to 2.0 GHz
• To be used in Class AB for DCS1800 and PCS1900/Cellular Radio
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
30 W, 1.88 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
24
Vdc
Collector–Emitter Voltage
VCES
60
Vdc
Emitter–Base Voltage
VEBO
4
Vdc
Collector–Current — Continuous
IC
10
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
125
0.71
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Max
Unit
RθJC
1.4
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 50 mA, IB = 0)
V(BR)CEO
24
29
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc)
V(BR)EBO
4
5
—
Vdc
Collector–Base Breakdown Voltage (IC = 50 mAdc)
V(BR)CES
60
68
—
Vdc
Collector–Base Breakdown Voltage (IC = 50 mAdc, RBE = 75 Ω)
V(BR)CER
40
56
—
Vdc
ICES
—
—
10
mA
hFE
20
50
120
—
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current (VCE = 30 V, VBE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)
(1) Thermal resistance is determined under specified RF operating condition.
REV 3
MOTOROLA RF
Motorola, Inc. 1996 DEVICE DATA
MRF6404
1
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NPN Silicon
RF Power Transistor
