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部品型式

MT28F400B1-8

製品説明
仕様・特性

4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply (Smart 5) 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 5 technology (B5): 5V ±10% VCC 5V ±10% VPP application/production programming1 • Advanced 0.18µm CMOS floating-gate process • Compatible with 0.3µm Smart 5 device • Address access time: 80ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence • Byte- or word-wide READ and WRITE (MT28F400B5, 256K x 16/512K x 8) • Byte-wide READ and WRITE only (MT28F004B5, 512K x 8) • TSOP and SOP packaging options OPTIONS 48-Pin TSOP Type I 44-Pin SOP2 GENERAL DESCRIPTION The MT28F004B5 (x8) and MT28F400B5 (x16, x8) are nonvolatile, electrically block-erasable (Flash), programmable, read-only memories containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process. The MT28F004B5 and MT28F400B5 are organized into seven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures. Please refer to Micron’s Web site (www.micron.com/ flash) for the latest data sheet. MARKING • Timing 80ns access • Configurations 512K x 8 256K x 16/512K x 8 • Boot Block Starting Word Address Top (3FFFFh) Bottom (00000h) • Operating Temperature Range Extended (-40ºC to +85ºC) • Packages MT28F004B5 Plastic 40-pin (standard) TSOP Type I Plastic 40-pin (lead free) TSOP Type I MT28F400B5 Plastic 48-pin (standard) TSOP Type I Plastic 48-pin (lead free) TSOP Type I Plastic 44-pin (standard) SOP Plastic 44-pin (lead free) SOP Notes: 40-Pin TSOP Type I -8 MT28F004B5 MT28F400B5 T B ET VG VP WG WP SG2 SP2 1. This generation of devices does not support 12V VPP compatibility production programming; however, 5V VPP application production programming can be used with no loss of performance. 2. Contact factory for availability. Part Number Example: MT28F400B5WG-8 T 09005aef8075d1f1 MT28F004B5.fm - Rev. 4, Pub. 2/2004 1 ©2002 Micron Technology, Inc. PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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