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SEMICONDUCTOR TECHNICAL DATA
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IRF540
TMOS E-FET.™
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET
27 AMPERES
100 VOLTS
RDS(on) = 0.070 OHMS
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters, and PWM motor
controls. These devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating area
are critical and offer additional safety margin against unexpected
voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
®
D
G
S
CASE 221A–09
TO-220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
100
Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
VDGR
100
Vdc
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Non–repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 ms)
ID
ID
IDM
27
19
95
Adc
Total Power Dissipation
Derate above 25°C
PD
145
1.16
Watts
W/°C
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, PEAK IL = 27 Apk, L = 1.0 mH, RG = 25 W)
EAS
365
mJ
Thermal Resistance — Junction–to–Case°
Thermal Resistance — Junction–to–Ambient°
RθJC
RθJA
0.86
62.5
°C/W
TL
260
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
Apk
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
REV 3
© Motorola TMOS
Motorola, Inc. 1998
Power MOSFET Transistor Device Data
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