SPD02N80C3
CoolMOSTM Power Transistor
Product Summary
Features
V DS
2.7
W
Q g,typ
• Extreme dv/dt rated
V
R DS(on)max @ Tj = 25°C
• New revolutionary high voltage technology
800
12
nC
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant ; available in Halogen free mold compounda)
• Ultra low gate charge
PG-TO252-3
• Ultra low effective capacitances
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Type
Package
Marking
SPD02N80C3
PG-TO252-3
xsx
02N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
2
T C=100 °C
Unit
1.2
Pulsed drain current2)
I D,pulse
T C=25 °C
6
Avalanche energy, single pulse
E AS
I D=1 A, V DD=50 V
90
Avalanche energy, repetitive t AR2),3)
E AR
I D=2 A, V DD=50 V
0.05
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
A
mJ
P tot
Operating and storage temperature
A
V DS=0…640 V
50
V/ns
static
±20
V
AC (f >1 Hz)
Power dissipation
2
±30
T C=25 °C
42
W
-55 ... 150
°C
T j, T stg
a)
non-Halogen free (OPN: SPD02N80C3BT); Halogen free (OPN: SPD02N80C3AT)
Rev. 2.92
2.91
page 1
2013-07-31
2011-09-28
