HIGH VOLTAGE POWER OPERATIONAL AMPLIFIER
PA45DIE
M I C R O T E C H N O L O G Y
HTTP://WWW.APEXMICROTECH.COM
(800) 546-APEX
(800) 546-2739
NO LONGER SUPPORTED FOR DESIGN-IN
SUPPLY VOLTAGE, +VS to –VS
OUTPUT CURRENT, continuous
INPUT VOLTAGE, differential
INPUT VOLTAGE, common mode
TEMPERATURE, junction
ABSOLUTE MAXIMUM RATINGS
150V
5A
±16V
±VS
150°C
NOTE: Because of wafer probing test limitations, full power tests are not possible. Refer to parent
product data sheet PA45 for typical AC, DC and power performance specifications.
DC WAFER PROBED SPECIFICATIONS
PARAMETER1
TEST CONDITIONS
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. supply
BIAS CURRENT, initial
OFFSET CURRENT, initial
SUPPLY CURRENT, quiescent
COMMON MODE REJECTION
VOLTAGE SWING, positive
VOLTAGE SWING, negative
ALARM, sink current
ALARM, leakage
VS = ±20V to ±75 V
VS = ±20V
VS = ±20V
VS = ±20V
VS = ±20V
VCM = ±45V, VS = ±75V
VS = ±50V, IO = 40mA
VS = ±50V, IO = –40mA
VS = ±20V to ±75 V
VS = ±20V to ±75 V
NOTES:
MIN
MAX
UNITS
25
25
1
1
26
mV
µV/V
nA
nA
mA
dB
V
V
µA
µA
84
40
–40
90
1
D
1. Current limit, IQ pin, and shutdown verified as operational.
DIE
LAYOUT
1
2
25
24
23
3
4
Pad
5
6
220 Mil
5588µ
11
22
21
12
7
20
13
8
19
14
9
15
10
Recommended wire is 2 mil aluminum. All large bond pads
must be used to avoid excessive current density in the die
metalization.
16
18
17
220 Mil
5588µ
Thickness: 11 Mil (280µ)
Backside: Silicon (no back metal)
Small Bond pads: 5 Mil sq (127µ) AI
Large Bond pads: 5 x 11 Mil (127µ x 280µ) AI
NOTE: Tie backside to –VS through die attach medium. Recommended die attach material is either conductive
epoxy or silver-glass. Lowest thermal resistance will
be obtained with silver-glass.
Function
Pad
Function
1
2
3*
4*
5
6-10
– Input
+ Input
Alarm
Shutdown
NC
–VS
11-16
17-21
22*
23
24
25
Output Drive
+VS
IQ
Compensation
Compensation
Current Limit Sense
* Pad 3 (Alarm) is tied to a switched current source. When an
over-temperature condition exits the current source turns on
and sinks 90µA to –VS. Pad 4 (Shutdown) will shut off the
output stage when at least 90µA is pulled from pad 4 to any
voltage at least 3 volts less positive than +VS (ground, for
example). When pad 3 is tied to pad 4 an over-temperature
condition will shut off the output stage until power is cycled
and the fault is removed. Normally pad 22 (IQ) is left open.
When pad 22 is tied to pad 23 the quiescent current in the
output stage is disabled. The result is lower quiescent but
class C biasing of the output stage.
CAUTION
PA45DIE is a MOSFET amplifier. ESD handling
procedures must be observed.
This data sheet has been carefully checked and is believed to be reliable, however, no responsibility is assumed for possible inaccuracies or omissions. All specifications prodlit@apexmicrotech.com
APEX MICROTECHNOLOGY CORPORATION • TELEPHONE (520) 690-8600 • FAX (520) 888-3329 • ORDERS (520) 690-8601 • EMAILare subject to change without notice.
PA45DIEU REV. A FEBRUARY 1998
© 1998 Apex Microtechnology Corp.
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