R1RW0416D Series
4M High Speed SRAM (256-kword × 16-bit)
REJ03C0107-0200
Rev. 2.00
Dec.12.2008
Description
The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system.
The
package prepares 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface
mounting.
Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Access time: 10 ns / 12 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 145 / 130mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current : 5 mA (max)
:
:
0.8 mA (max) (L-version)
0.5 mA (max) (S-version)
• Data retention current :
0.4 mA (max) (L-version)
:0.2 mA (max) (S-version)
• Data retention voltage: 2.0 V (min) (L-version , S-version)
• Center VCC and VSS type pin out
REJ03C0107-0200 Rev.2.00,
Dec.12.2008,
page 1 of 15
