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DB2132000L
Doc No. TT4-EA-13677 Revision. 3 Product Standards Schottky Barrier Diode DB2132000L DB2132000L Silicon epitaxial planar type Unit: mm For rectification DB22320 in SMini2 type package 1.25 0.6 0.12 2 Features 1.9 2.5 Low forward voltage VF Small reverse leakage current Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: B5 0.8 0.55 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25 C Parameter Symbol Reverse voltage Repetitive peak reverse voltage Forward current (Average) *1 Non-repetitive peak forward surge current Junction temperature Operating ambient temperature Storage temperature Note: *2 VR VRRM IF(AV) IFSM Tj Topr Tstg 1. Cathode 2. Anode Panasonic JEITA Code Rating Unit 30 30 1.5 20 125 -40 to +85 -55 to +125 V V A A °C °C °C *1 For embedded alumina substrate (substrate size:5 cm × 5 cm) *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) SMini2-F4-B-B SC-108A ― Internal Connection 2 1 Page 1 of 4 Established : 2011-07-08 Revised : 2013-04-19
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