PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
100 W, 1930 – 1990 MHz
Description
The PTFA191001E and PTFA191001F are thermally-enhanced,
100-watt, internally-matched LDMOS FETs intended for WCDMA,
IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz.
Thermally-enhanced packaging provides the coolest operation
available.
PTFA191001E
Package H-36248-2
PTFA191001F
Package H-37248-2
Features
Two-carrier WCDMA Drive-up
Broadband internal matching
•
Typical two-carrier WCDMA performance at 1960
MHz, 30 V
- Average output power = 25 W
- Linear Gain = 17.0 dB
- Efficiency = 27.5%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –41.0 dBc
•
Typical two-carrier IS-95 performance at 1930
MHz, 30 V
- Average output power = 25 W
- Efficiency = 28%
- Intermodulation distortion = –35 dBc @ 1.2288
- Adjacent channel power = –51 dBm
•
Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 130 W
- Efficiency = 56%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•
Excellent thermal stability, low HCI drift
•
35
Thermally-enhanced packages, Pb-free and
RoHS-compliant
•
-23
•
•
VDD = 30 V, IDQ = 900 mA, ƒ = 1960 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
Capable of handling 10:1 VSWR @ 30 V,
100 W (CW) output power
-28
30
-33
25
IM3
-38
20
-43
15
-48
Drain Efficiency (%)
IM3 (dBc), ACPR (dBc)
Efficiency
10
ACPR
-53
5
34
36
38
40
42
44
46
Average Output Power (dBm)
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 04, 2007-10-31