RF2131
0
HIGH EFFICIENCY AMPS/ETACS AMPLIFIER
Typical Applications
• AMPS/ETACS Cellular Handsets
• Commercial and Consumer Systems
• CDPD Portable Data Cards
• Portable Battery-Powered Equipment
• 900MHz ISM Band Equipment
Product Description
The RF2131 is a high-power, high-efficiency amplifier IC.
The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process,
and has been designed for use as the final RF amplifier in
AMPS and ETACS handheld equipment, spread spectrum systems, CDPD, and other applications in the
800MHz to 950MHz band. On-board power control provides over 30dB of control range with an analog voltage
input, and provides power down with a logic "low" for
standby operation. Although it is intended for class C
operation, linear class AB operation can be achieved by
raising the bias level. The device is self-contained with
50Ω input and the output can be easily matched to obtain
optimum power and efficiency characteristics.
Optimum Technology Matching® Applied
Si BJT
GaAs HBT
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
0.009
0.004
0.021
0.014
0.069
0.064
0.392
0.386
0.244
0.230
0.050
0.060
0.054
8° MAX
0° MIN
0.035
0.016
0.010
0.008
Package Style: Standard Batwing
GaAs MESFET
Si Bi-CMOS
-A0.158
0.150
SiGe Bi-CMOS
Features
• Single 4.0V to 7.0V Supply
• 1.2W Output Power
PC 1
16 NC
• 25dB Gain With Analog Gain Control
• 64% Efficiency
NC 2
VCC2 3
BIAS
15 RF OUT
14 RF OUT
GND 4
• 800MHz to 950MHz Operation
13 GND
GND 5
• Digitally Controlled Power Down Mode
12 GND
Ordering Information
GND1 6
11 RF OUT
RF IN 7
10 RF OUT
VCC1 8
9 NC
Functional Block Diagram
Rev B4 010417
RF2131
RF2131 PCBA
High Efficiency AMPS/ETACS Amplifier
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
2-99