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RF2421
RF2421 0 10dB SWITCHED ATTENUATOR Typical Applications • Power Control in Communication Systems • Commercial and Consumer Systems • CMOS Compatible Programmable • Portable Battery-Powered Equipment Attenuator 0.196 0.189 E S 0.050 N E W 8° MAX 0° MIN Optimum Technology Matching® Applied GaAs HBT Si Bi-CMOS SiGe HBT InGaP/HBT GaN HEMT ! Dimensions in mm 0.244 0.229 0.034 0.016 0.009 0.007 0.068 0.053 NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity 0.005 with respect to datum "A". Package Style: SOIC-8 Si CMOS Features SiGe Bi-CMOS • Single 2.7V to 6V Supply FO N O T NC 1 0.157 0.150 GaAs MESFET R Si BJT -A0.008 0.004 0.018 0.014 D The RF2421 is a monolithic switched attenuator. The device is built using a Gallium Arsenide process technology and has a single step attenuation of 10dB. The input and output of the device has a low VSWR 50Ω match. The RF output can drive up to +16dBm. This unit is intended for use in systems that require RF power control by digital means. No negative supply voltages are required, and the current consumption is less than 5 µA when the attenuator is off. IG N S Product Description • 10dB Single Step Attenuation • 1 dB Insertion Loss • 1-bit Digitally Controlled Attenuation • Digitally Controlled Power Down Mode 8 NC • 500MHz to 3000 MHz Operation RF IN 2 7 G10 GND 3 6 VDD RF OUT4 Ordering Information 5 NC Functional Block Diagram RF2421 RF2421 PCBA 10dB Switched Attenuator Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com NOT FOR NEW DESIGNS Rev B1 030129 9-7
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