2N3904
NPN Silicon Transistor
Descriptions
PIN Connection
• General small signal application
• Switching application
C
Features
B
C
B
E
• Low collector saturation voltage
• Collector output capacitance
• Complementary pair with 2N3906
E
TO-92
Ordering Information
Type NO.
Marking
2N3904
Package Code
2N3904
TO-92
Absolute maximum ratings
Ta=25°C
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
60
V
Collector-Emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
200
mA
Collector dissipation
PC
625
mW
Junction temperature
Tj
150
°C
Tstg
-55~150
°C
Storage temperature range
Electrical Characteristics
Characteristic
Ta=25°C
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=10μA, IE=0
60
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=1mA, IB=0
40
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=10μA, IC=0
6
-
-
V
Collector cut-off current
ICEX
VCE=30V, VEB=3V
-
-
50
nA
DC current gain
hFE
VCE=1V, IC=10mA
100
-
300
-
VCE(sat)
IC=50mA, IB=5mA
-
-
0.3
V
fT
VCE=20V, IC=10mA,
f=100MHz
300
-
-
MHz
VCB=5V, IE=0, f=1MHz
-
-
4
pF
VCC=3Vdc, VBE(off)=0.5Vdc.
IC=10mAdc, IB1=1mAdc
-
-
35
ns
-
-
35
ns
-
-
200
ns
-
-
50
ns
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Cob
Delay time
td
Rise time
tr
Storage time
ts
Fall Time
tf
VCC=3Vdc,IC=10mAdc,
IB1=IB2=1mAdc
KSD-T0A033-000
1