S9018T
NPN Plastic-Encapsulate Transistors
RoHS Compliant Product
TO-92
A suffix of "-C" specifies halogen & lead-free
4.55±0.2
3.5 ±0.2
4.5±0.2
FEATURE
Power dissipation
W (Tamb=25 C)
o
0.4
14.3 ±0.2
PCM :
Collector current
0.05
ICM:
Collector-base voltage
A
V(BR)CBO : 25
V
0.43 +0.08
–0.07
0.46 +0.1
–0.1
(1.27 Typ.)
Operating and storage junction temperature range
o
Tj, Tstg:
1: Emitter
2: Base
3: Collector
+0.2
1.25–0.2
o
-55 C to +150 C
1 2 3
2.54 ±0.1
o
ELECTRICAL CHARACTERISTICS (Tamb=25 C
Parameter
Symbol
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA, IE=0
25
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 0. 1mA, IB=0
18
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
4
V
Collector cut-off current
ICBO
VCB= 20V, IE=0
0.1
µA
Collector cut-off current
ICEO
VCE= 15V, IB=0
0.1
µA
Emitter cut-off current
IEBO
VEB= 3V, IC=0
0.1
µA
DC current gain
hFE(1)
VCE= 5V, IC= 1mA
Collector-emitter saturation voltage
VCE(sat)
IC=10mA, IB=1mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=10mA, IB=1mA
1.4
V
fT
VCE=5 V, IC=5 mA
f =400MHz
Transition frequency
28
270
600
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
D
E
F
G
H
I
J
28-45
39-60
54-80
72-108
97-146
132-198
180-270
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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