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部品型式

SA608DA

製品説明
仕様・特性

Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · Capable of being used in the low frequency to high frequency range. unit:mm 2164 [2SA608N/2SC536N] Features 4.5 3.7 3.5 4.5 1.4max · Large current capacity and wide ASO. 0.45 14.0 13.7 0.6 1.27 4.0max 0.45 0.5 0.44 1 2.5 2 3 1 : Emitter 2 : Collector 3 : Base SANYO : NPA-WA 2.5 ( ) : 2SA608N Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–50)60 V Collector-to-Emitter Voltage VCEO VEBO (–)50 V IC (–)150 Collector Current (Pulse) ICP (–)400 mA Collector Dissipation 500 mW Junction Temperature PC Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Emitter-to-Base Voltage Collector Current (–)6 V mA Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(–)40V, IE=0 (–)0.1 µA Emitter Cutoff Current IEBO VEB=(–)5V, IC=0 (–)0.1 µA DC Current Gain hFE1 hFE2 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)0.1mA 160* 560* 70 Continued on next page. * The 2SA608N/2SC536N are classified by 1mA hFE as follow Rank F G hFE 160 to 320 280 to 560 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 10700TS (KOTO) TA-2543 No.6324–1/4

ブランド

PHILIPS

現況

2006年8月フィリップス社が半導体部門を投資家グループに売却しKASLION Acquisition B.V.の名称で法人化。2010年5月 社名を現在のNXPセミコンダクターズN.V.に変更。

現ブランド

NXP

会社名

NXP Semiconductors

本社国名

オランダ

事業概要

高性能ミックスドシグナルICのほか、ディスクリートなどの汎用製品をグローバルに提供している。

供給状況

 
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