LS3954A LS3954 LS3955
LS3956 LS3958
LOW NOISE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated Systems
FEATURES
LOW DRIFT
|∆VGS1-2 /∆T|= 5µV/°C max.
LOW LEAKAGE
IG = 20pA TYP.
LOW NOISE
en= 10nV/√Hz TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
G1
-65° to +200°C
+150°C
D1
Drain to Source Voltage
Gate Forward Current
S1
6 D2
G2
1
S1
50mA
S2
7
G2
D2
31 X 32 MILS
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
S2
G1
60V
-IG(f)
5
D12
Maximum Voltage and Current for Each Transistor NOTE 1
Gate to Drain or Source Voltage
60V
-VGSS
-VDSO
3
BOTTOM VIEW
400mW @ 25°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS3954A LS3954 LS3955 LS3956 LS3958 UNITS CONDITIONS
5
10
25
50
100
µV/°C VDG= 20V, ID= 200µA
|∆VGS1-2 /∆T| max. Drift vs. Temperature
TA= -55°C to +125°C
|VGS1-2| max.
Offset Voltage
SYMBOL
BVGSS
CHARACTERISTICS
Breakdown Voltage
BVGGO
Gate-to-Gate Breakdown
5
5
10
15
25
mV
VDG= 20V, ID= 200µA
MIN.
60
TYP.
--
MAX.
--
UNITS
V
CONDITIONS
VDS= 0
ID= 1µA
60
--
--
V
IG= 1nA
ID= 0
IS= 0
VDG= 20V
VGS= 0
f= 1kHz
VDG= 20V
ID= 200µA
VDG= 20V
VGS= 0
TRANSCONDUCTANCE
Yfss
Full Conduction
1000
2000
3000
µmho
Yfs
Typical Operation
500
700
1000
µmho
|Yfs1-2/Yfs|
Mismatch
--
0.6
3
%
DRAIN CURRENT
IDSS
Full Conduction
0.5
2
5
mA
|IDSS1-2/IDSS|
Mismatch at Full Conduction
--
1
5
%
GATE VOLTAGE
VGS(off) or VP
Pinchoff Voltage
1
2
4.5
V
VDS= 20V
ID= 1nA
VGS
Operating Range
0.5
--
4
V
VDS= 20V
ID= 200µA
GATE CURRENT
-IG
Operating
--
20
50
pA
VDG= 20V
ID= 200µA
-IG
High Temperature
--
--
50
nA
VDG= 20V
ID= 200µA
-IG
Reduced VDG
--
5
--
pA
VDG= 10V
ID= 200µA
-IGSS
At Full Conduction
--
--
100
pA
VDG= 20V
VDS= 0
Linear Integrated Systems
TA=+125°C
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
