Si3443DV
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
FEATURES
ID (A)
0.065 @ VGS = - 4.5 V
- 4.5
0.090 @ VGS = - 2.7 V
- 3.8
0.100 @ VGS = - 2.5 V
- 20
rDS(on) (W)
- 3.7
D TrenchFETr Power MOSFET
D 100% Rg Tested
TSOP-6
Top View
1
6
2
5
3
3 mm
(4) S
4
(3) G
2.85 mm
(1, 2, 5, 6) D
Ordering Information: Si3443DV-T1
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
"12
Unit
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
IS
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
PD
- 3.4
- 4.5
- 3.6
IDM
continuous Source Current (Diode Conduction)a
V
- 2.7
- 20
- 1.7
- 0.9
2.0
1.1
1.3
0.7
A
TJ, Tstg
- 55 to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambienta
ti t A bi t
Maximum Junction-to-Foot (Drain)
Symbol
t v 5 sec
Steady State
Steady State
RthJF
Maximum
50
RthJA
Typical
62.5
90
110
22
Unit
30
_C/W
C/W
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71741
S-31725—Rev. D, 18-Aug-03
www.vishay.com
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