Si6803DQ
Vishay Siliconix
N- and P-Channel Half-Bridge, Reduced Qg, Fast Switching
PRODUCT SUMMARY
VDS (V)
N-Channel
rDS(on) (W)
0.095 @ VGS = 4.5 V
20
ID (A)
"2.5
0.145 @ VGS = 3.0 V
–20
"2.3
0.165 @ VGS = –3.0 V
P-Channel
"2.0
0.110 @ VGS = –4.5 V
"1.9
S2
G2
TSSOP-8
8
D
D
7
S2
D
3
6
S2
4
5
G2
D
1
S1
2
S1
G1
D
Si6803DQ
G1
Top View
S1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
IS
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
Unit
–20
V
"12
"2.5
"2.3
"2.0
"1.9
"10
IDM
Continuous Source Current (Diode Conduction)a
P-Channel
1.0
A
–1.0
1.0
PD
W
0.64
TJ, Tstg
–55 to 150
_C
Symbol
N- or P-Channel
Unit
RthJA
125
_C/W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70769
S-56944—Rev. B, 23-Nov-98
www.vishay.com S FaxBack 408-970-5600
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