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SI9925DY-T1
Si9925DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.05 @ VGS = 4.5 V 5.0 0.06 @ VGS = 3.0 V 4.2 0.08 @ VGS = 2.5 V 20 ID (A) 3.6 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 5 D2 G2 4 G1 G2 Top View S1 Ordering Information: Si9925DY Si9925DY-T1 (with Tape and Reel) N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "12 Unit Continuous Drain Current (TJ = 150_C)a TA = 25_C 5.0 ID TA = 70_C Pulsed Drain Current 4.0 IDM 48 IS Continuous Source Current (Diode Conduction)a 2 PD TA = 70_C Operating Junction and Storage Temperature Range A 1.7 TA = 25_C Maximum Power Dissipationa V 1.3 W TJ, Tstg - 55 to 150 _C Symbol Limit Unit RthJA 62.5 _C/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70145 S-03950—Rev. N, 26-May-03 www.vishay.com 1
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