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SI9953DY
Si9953DY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V –20 ID (A) "1.5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "20 Unit Continuous Drain Current (TJ = 150_C)a TA = 25_C ID TA = 70_C "2.3 "1.8 IDM Continuous Source Current (Diode Conduction)a TA = 25_C Maximum Power Dissipationa A –1.7 2.0 PD TA = 70_C Operating Junction and Storage Temperature Range "10 IS Pulsed Drain Current V W 1.3 TJ, Tstg –55 to 150 _C Symbol Limit Unit RthJA 62.5 _C/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70138 S-00652—Rev. K, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 1
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