(2 k Ω) (80Ω) E
2SB1382
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082)
sElectrical Characteristics
–120
V
ICBO
VCEO
–120
V
IEBO
VEBO
–6
V
V(BR)CEO
–16(Pulse–26)
A
hFE
Unit
VCB=–120V
–10max
µA
–10max
mA
VEB=–6V
IC=–10mA
–120min
VCE=–4V, IC=–8A
15.6±0.2
2000min
V
IB
–1
A
VCE(sat)
IC=–8A, IB=–16mA
–1.5max
PC
75(Tc=25°C)
W
VBE(sat)
IC=–8A, IB=–16mA
–2.5max
150
°C
fT
VCE=–12V, IE=1A
50typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
350typ
pF
3.0
3.3
1.05 +0.2
-0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
5
–8
–10
5
–16
16
0.8typ
1.8typ
1.0typ
–1
–2
–3
–4
–5
–16
0
–0.5
–6
–1
Collector-Emitter Voltage V C E (V)
–10
(V C E =–4V)
Typ
5000
1000
–5
–10
–16
10000
12
Transient Thermal Resistance
D C Cur r ent Gai n h F E
20000
10000
5˚C
5000
25
˚C
–
˚C
30
1000
500
–0.3
–0.5
–1
f T – I E Characteristics (Typical)
–5
–10
–16
s
0µ
s
s
DC
–5
)
emp
nk
16
40
si
Without Heatsink
Natural Cooling
at
–1
–0.5
60
he
M aximu m Power Dissipat io n P C (W)
m
10
ite
Co lle ctor Cu rren t I C (A)
1m
fin
10
mp)
P c – T a Derating
In
5
1000
80
10
–0.05
–0.03
–3
e Te
100
ith
1
10
W
0.5
1
Time t(ms)
–0.1
Emitter Current I E (A)
p)
0.2
–50
–10
44
0.5
Safe Operating Area (Single Pulse)
Typ
0
0.05 0.1
–2.4
1
(V C E =–12V)
50
–2
3
Collector Current I C (A)
Collector Current I C (A)
100
–1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
20000
–1
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.5
0
–100
Base Current I B (mA)
h FE – I C Characteristics (Typical)
500
–0.3
Tem
–4
(Cas
–4A
–1
–8
se T
–8A
se
I C =–16A
–12
(Ca
–2
(V C E =–4V)
(Ca
I B =–1.5m A
0
–3
˚C
–6 mA
–3m A
0
E
25˚C
A
–12m
–10
C
125
A
Collector Current I C (A)
–
m
20
–20
Collector Current I C (A)
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I C – V BE Temperature Characteristics (Typical)
θ j - a ( ˚ C/ W)
–4
0m
A
–26
B
3.35
1.5
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
I C – V CE Characteristics (Typical)
D C Cur r ent Gai n h F E
4.4
tf
(µs)
–40
0.65 +0.2
-0.1
5.45±0.1
1.5
VCC
(V)
0.8
2.15
5.45±0.1
sTypical Switching Characteristics (Common Emitter)
Cut- off F req uency f T (MH Z )
1.75
16.2
Tstg
3.45 ±0.2
ø3.3±0.2
a
b
V
Tj
V
5.5±0.2
–30˚C
IC
Ratings
0.8±0.2
VCBO
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
Symbol
5.5
Unit
C
1.6
Ratings
Symbol
Equivalent circuit
9.5±0.2
sAbsolute maximum ratings (Ta=25°C)
B
Application : Chopper Regulator, DC Motor Driver and General Purpose
23.0±0.3
Darlington
20
Without Heatsink
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
3.5
0
0
50
100
Ambient Temperature Ta(˚C)
150
