SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
OptiMOS® Power-Transistor
Product Summary
Feature
• N-Channel
VDS
30
V
• Enhancement mode
RDS(on) max. SMD version
3.1
mΩ
• Excellent Gate Charge x RDS(on) product (FOM)
ID
80
A
• Superior thermal resistance
P- TO263 -3-2
P- TO262 -3-1
P- TO220 -3-1
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
Type
SPP80N03S2-03
Package
P- TO220 -3-1
Ordering Code
Q67040-S4247
Marking
SPB80N03S2-03
P- TO263 -3-2
Q67040-S4258
2N0303
SPI80N03S2-03
P- TO262 -3-1
Q67042-S4079
2N0303
2N0303
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
Value
Unit
A
ID
80
TC=25°C
80
ID puls
320
EAS
810
Repetitive avalanche energy, limited by Tjmax 2)
EAR
30
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
300
W
-55... +175
°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
mJ
ID=80 A , V DD=25V, RGS=25Ω
kV/µs
IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C
TC=25°C
Operating and storage temperature
T j , Tstg
55/175/56
IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
