1 Mbit (128K x8) Page-Write EEPROM
SST29EE010
SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories
Data Sheet
FEATURES:
• Single Voltage Read and Write Operations
– 4.5-5.5V for SST29EE010
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current: 20 mA (typical) for 5V and
10 mA (typical) for 2.7V
– Standby Current: 10 µA (typical)
• Fast Page-Write Operation
– 128 Bytes per Page, 1024 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 5 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
– 4.5-5.5V operation: 70 and 90 ns
– 2.7-3.6V operation: 150 and 200 ns
• Latched Address and Data
• Automatic Write Timing
– Internal VPP Generation
• End of Write Detection
– Toggle Bit
– Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via
Software Operation
• TTL I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
– 32-pin PDIP
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST29EE010 is a 128K x8 CMOS Page-Write
EEPROMs manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE010 write with a single power
supply. Internal Erase/Program is transparent to the user.
The SST29EE010 conform to JEDEC standard pinouts for
byte-wide memories.
Featuring high performance Page-Write, the SST29EE010
provides a typical Byte-Write time of 39 µsec. The entire
memory, i.e., 128 Kbyte, can be written page-by-page in as
little as 5 seconds, when using interface features such as
Toggle Bit or Data# Polling to indicate the completion of a
Write cycle. To protect against inadvertent write, the
SST29EE010 has on-chip hardware and Software Data
Protection schemes. Designed, manufactured, and tested
for a wide spectrum of applications, the SST29EE010 is
offered with a guaranteed Page-Write endurance of 10,000
cycles. Data retention is rated at greater than 100 years.
applications, the SST29EE010 significantly improves
performance and reliability, while lowering power consumption. The SST29EE010 improves flexibility while
lowering the cost for program, data, and configuration
storage applications.
To meet high density, surface mount requirements, the
SST29EE010 is offered in 32-lead PLCC and 32-lead
TSOP packages. A 600-mil, 32-pin PDIP package is also
available. See Figures 2, 3, and 4 for pin assignments.
Device Operation
The SST Page-Write EEPROM offers in-circuit electrical
write capability. The SST29EE010 does not require separate Erase and Program operations. The internally timed
Write cycle executes both erase and program transparently
to the user. The SST29EE010 has industry standard
optional Software Data Protection, which SST recommends always to be enabled. The SST29EE010 is compatible with industry standard EEPROM pinouts and
functionality.
The SST29EE010 is suited for applications that
require convenient and economical updating of program, configuration, or data memory. For all system
©2009 Silicon Storage Technology, Inc.
S71061-13-000
3/09
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
