TC7SH08FS
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7SH08FS
2-Input AND Gate
Features
High speed
: tpd = 4.3ns (typ.) at VCC = 5V, 15pF
Low power dissipation
: ICC = 2 μA (max) at Ta = 25°C
High noise immunity
: VNIH = VNIL = 28% VCC (min)
SON5-P-0.35
5.5-V tolerant inputs
Wide operating voltage range: VCC = 2 to 5.5 V
(fSV)
Weight: 0.001 g (typ.)
Marking
Pin Assignment (top view)
Product Name
1
GND
2
IN B
H
IN A
5 VCC
3
2
4
OUT Y
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
−0.5 to 7.0
V
DC input voltage
VIN
−0.5 to 7.0
V
DC output voltage
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
−20
mA
Output diode current
IOK
±20
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
50
mW
Storage temperature
Tstg
−65 to 150
°C
(Note1)
mA
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: VOUTVCC
1
2009-09-09
