TPCF8305
MOSFETs
Silicon P-Channel MOS (U-MOS)
TPCF8305
1. Applications
•
Notebook PCs
•
Mobile Equipment
2. Features
(1)
Small footprint due to a small and thin package
(2)
Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ.) (VGS = -4.5 V)
(3)
Low leakage current: IDSS = -10 µA (max) (VDS = -20 V)
(4)
Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.2 mA)
3. Packaging and Internal Circuit
1: Source 1
2: Gate 1
3: Source 2
4: Gate 2
5, 6: Drain 2
7, 8: Drain 1
VS-8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Drain current (DC)
(Note 1)
Drain current (pulsed)
-20
V
VGSS
Gate-source voltage
Unit
VDSS
Drain-source voltage
Rating
±12
ID
-4
A
(Note 1)
IDP
-16
Power dissipation (single operation)
(t = 5 s)
(Note 2), (Note 4)
PD(1)
1.35
Power dissipation (per device for dual
operation)
(t = 5 s)
(Note 2), (Note 5)
PD(2)
1.12
Power dissipation (single operation)
(t = 5 s)
(Note 3), (Note 4)
PD(1)
0.53
Power dissipation (per device for dual
operation)
(t = 5 s)
(Note 3), (Note 5)
PD(2)
0.33
(Note 6)
EAS
10.4
mJ
IAR
-4
A
Single-pulse avalanche energy
Avalanche current
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1
2010-04
2014-02-27
Rev.2.0
