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MBM29F800BA90PFTN

製品説明
仕様・特性

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 44-pin SOP (Package suffix: PF) • Minimum 100,000 write/erase cycles • High performance 55 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase. • Boot Code Sector Architecture T = Top sector B = Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion • Low Vcc write inhibit ≤ 3.2 V • Erase Suspend/Resume Suspends the erase operation to allow a read data in another sector within the same device • Hardware RESET pin Resets internal state machine to the read mode • Sector protection Hardware method disables any combination of sectors from write or erase operations • Temporary sector unprotection Temporary sector unprotection via the RESET pin. Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

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