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BFP23
PNP Silicon Transistors with High Reverse Voltage BFP 23 BFP 26 High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary types: BFP 22, BFP 25 (NPN) q 1 3 2 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BFP 23 BFP 26 – Q62702-F622 Q62702-F722 E C TO-92 B Maximum Ratings Parameter Symbol Values BFP 26 BFP 23 Unit Collector-emitter voltage VCE0 200 300 V Collector-base voltage VCB0 200 300 Emitter-base voltage VEB0 Collector current IC 200 Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 66 ˚C Ptot 625 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg 6 mA – 65 … + 150 Thermal Resistance Junction - ambient Rth JA ≤ 200 Junction - case2) Rth JC ≤ 135 1) 2) For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. K/W
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