FDB035AN06A0
N-Channel PowerTrench® MOSFET
60 V, 80 A, 3.5 mΩ
Features
Applications
• RDS(on) = 3.2 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
• Synchronous Rectification for ATX / Server / Telecom PSU
• QG(tot) = 95 nC ( Typ.) @ VGS = 10 V
• Battery Protection Circuit
• Low Miller Charge
• Motor drives and Uninterruptible Power Supplies
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82584
D
D
G
G
D2-PAK
S
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
Drain to Source Voltage
FDB035AN06A0
60
Unit
V
Gate to Source Voltage
±20
V
80
A
22
A
r
Parameter
Drain Current
ID
Continuous (TC < 153oC, VGS = 10V)
o
o
Continuous (Tamb = 25 C, VGS = 10V, with RθJA = 43 C/W)
Pulsed
E AS
PD
TJ, TSTG
Figure 4
Power dissipation
A
625
Single Pulse Avalanche Energy (Note 1)
mJ
310
Derate above 25oC
W
2.07
-55 to 175
Operating and Storage Temperature
W/oC
C
o
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case, Max.
RθJA
Thermal Resistance, Junction to Ambient, Max. (Note 2)
RθJA
Thermal Resistance, Junction to Ambient, 1in copper pad area, Max.
©2002 Fairchild Semiconductor Corporation
FDB035AN06A0 Rev. C2
0.48
2
1
oC/W
62
o
C/W
43
o
C/W
www.fairchildsemi.com
FDB035AN06A0 — N-Channel PowerTrench® MOSFET
November 2013
