BCX54/BCX55/BCX56
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
FEATURES
High current
Low voltage
Medium power general purposes
Driver stages of audio amplifiers.
1
2
3
SOT-89
MAKING: BCX54:BA BCX54-10:BC BCX54-16:BD
BCX55:BE BCX55-10:BG BCX52-16:BM
BCX56:BH BCX56-10:BK BCX56-16:BL
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Collector-Base Voltage
Collector-Emitter Voltage
45
60
BCX56
VCEO
BCX54
BCX55
VCBO
Units
100
V
45
BCX54
BCX55
BCX56
V
60
80
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1
A
PC
Collector Power Dissipation
500
mW
TJ
Junction Temperature
150
Tstg
Storage Temperature
-65-150
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
BCX54
60
BC56
45
BCX55
60
BCX56
UNIT
100
BCX54
MAX
45
BCX55
IC=100μA,IE=0
Collector-base breakdown voltage
TYP
80
V(BR)CBO
IC=1mA,IB=0
V
V
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
Collector cut-off current
ICBO
VCB=30V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
hFE(1)
VCE=2V,IC=5mA
40
hFE(2)
VCE=2V,IC=150mA
63
hFE(3)
VCE=2V,IC=500mA
25
DC current gain
Collector-emitter saturation voltage
VCE(sat)
Base-emitter voltage
VBE
Transition frequency
fT
W E IT R O N
h t t p : / / w w w . w e i t r o n . c o m . tw
5
V
250
IC=-500mA,IB=-50mA
0.5
1
VCE=2V,IC=500mA
VCE=5V,IC=10mA,f=100MHz
1/2
130
V
V
MHz
25-Jun-08
